Question
a. Sketch the basic construction of a $p$ -channel depletion-type MOSFET.b. Apply the proper drain-to-source voltage and sketch the flow of electrons for $V_{G S}=0 \mathrm{~V}$.
Step 1
The basic construction of a p-channel depletion-type MOSFET consists of the following components: Show more…
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Consider an n-channel silicon MOSFET. The parameters are $k_{n}^{\prime}=75 \mu \mathrm{A} / \mathrm{V}^{2}$, $W / L=10$, and $V_{T}=0.35 \mathrm{~V}$. The applied drain-to-source voltage is $V_{D S}=1.5 \mathrm{~V}$. (a) For $V_{G S}=0.8 \mathrm{~V}$, find $(i)$ the ideal drain current, $(i i)$ the drain current if $\lambda=0.02 \mathrm{~V}^{-1}$, and (iii) the output resistance for $\lambda=0.02 \mathrm{~V}^{-1} .(b)$ Repeat part $(a)$ for $V_{G S}=1.25 \mathrm{~V}$.
Consider a p-channel MOSFET with the following parameters: $k_{p}^{\prime}=0.12 \mathrm{~mA} / \mathrm{V}^{2}$ and $W / L=20$. The drain current is $100 \mu$ A with applied voltages of $V_{S G}=0$, $V_{B S}=0$, and $V_{S D}=1.0 \mathrm{~V} .(a)$ Determine the $V_{T}$ value. $(b)$ Determine the drain current $I_{D}$ for $V_{S G}=0.4 \mathrm{~V}, V_{S B}=0$, and $V_{S D}=1.5 \mathrm{~V} .(c)$ What is the value of $I_{D}$ for $V_{S G}=0.6 \mathrm{~V}, V_{S B}=0$, and $V_{S D}=0.15 \mathrm{~V} ?$
Consider an n-channel enhancement mode MOSFET biased as shown in Figure $\mathrm{P} 10.40 .$ Sketch the current-voltage characteristics, $I_{D}$ versus $V_{D S}$, for (a) $V_{G D}=0$, (b) $V_{G D}=V_{T} / 2$, and (c) $V_{G D}=2 V_{T}$.
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