Question
Calculate $g_{m 0}$ for a JFET having device parameters $I_{D S S}=12 \mathrm{~mA}$ and $V_{P}=-4 \mathrm{~V}$.
Step 1
Step 1: Recall the formula for transconductance $g_{m0}$ for a JFET: $$g_{m0} = \frac{2I_{DSS}}{|V_P|}$$ Show more…
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For a JFET having device parameters $g_{m 0}=5 \mathrm{mS}$ and $V_{P}=-4 \mathrm{V}$, what is the device current at $V_{G S}=0 \mathrm{V} ?$
Consider an n-channel GaAs JFET at $T=300 \mathrm{~K}$ with the following parameters: $$ \begin{array}{rlrl} N_{a} & =5 \times 10^{18} \mathrm{~cm}^{-3} & N_{d} & =2 \times 10^{16} \mathrm{~cm}^{-3} \\ a & =0.35 \mu \mathrm{m} & L & =10 \mu \mathrm{m} \\ W & =30 \mu \mathrm{m} & \mu_{n} & =8000 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s} \end{array} $$ Ignoring velocity saturation effects, calculate $(a) G_{01} ;(b) V_{D S}($ sat $)$ for $V_{G S}=0$ and $V_{G S}=V_{p} / 2 ;$ and $(c) I_{D 1}($ sat $)$ for $V_{G S}=0$ and $V_{G S}=V_{p} / 2 .(d)$ Sketch the $I-V$ characteristics using the results from parts $(b)$ and $(c)$.
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