Consider a silicon $p-n$ junction solar cell of area $2 \mathrm{~cm}^{2}$. If the dopings of the solar cell are $N_{A}=1.7 \times 10^{16} \mathrm{~cm}^{-3}$ and $N_{D}=5 \times 10^{19} \mathrm{~cm}^{-3}$, and given $\tau_{n}=10 \mu \mathrm{s}, \tau_{p}=0.5 \mu \mathrm{s}, D_{n}=9.3 \mathrm{~cm}^{2} / \mathrm{s}, D_{p}=2.5 \mathrm{~cm}^{2} / \mathrm{s}$, and $I_{L}=95 \mathrm{~mA}$, (a) calculate and plot the I-V characteristics of the solar cell, (b) calculate the open-circuit voltage, and (c) determine the maximum output power of the solar cell, all at room temperature.