00:05
In this question we have to find these 5 parameters for silicon and gallimax9.
00:13
So first, from given information x n is 0 .25 of the deposition region 5th, which is 2 .25 of x .n plus xp.
00:29
And so we'll have that it is 0 .75 x n is 0 .25 xp and xp or xn is 3 and xnnn d is xp na which is n d or n a equals xp or n equals 3 so n d is 3n and a now for silicon, the building barrier is 0 .0259, log na and d, where we can write it as 3n8 square, right by 1 .5 times 10 to the power of 10 square.
01:34
And we build in is 0 .71 volt so we can find the value of n a which it will be 7 .76 xx10 to the power 15 per cubic centimeter and then we can find that n d which is 3a it is 2 .33 time 10 to the power of 16 per cubic centimeter and so x n d which is 3a it is 2 .33 time 10 to the power of 16 per cubic centimeter and so x n.
02:09
Is 2 epsilon s, divide by e, time n a over n d, 1 over n a plus n d to the power 1 over 2.
02:26
And xp is to epsilon s, divide by e, n d over n a 1 over n a 1 plus n d to the power of 1 over 2.
02:44
So xn is 0993 microns and xp is 0 .2909 microns.
02:59
Then the absolute e -max is endxxxxxxxxxxxxxxx which is 3 .58 times 10 to the powerful world per centimeter...