Question
From memory only, sketch the common-base BJT transistor configuration (for $n p n$ and $p n p$ ) and indicate the polarity of the applied bias and resulting current directions.
Step 1
For an NPN transistor in common-base configuration, the base terminal is common to both input and output. The emitter terminal is connected to the input, and the collector terminal is connected to the output. Show more…
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Sketch the common-base BJT transistor configuration and describe its input/output terminals and input/output signals.
Assume that an npn bipolar transistor has a common-emitter current gain of $\beta=100 .(a)$ Sketch the ideal current-voltage characteristics $\left(i_{C}\right.$ versus $\left.v_{C R}\right)$, like those in Figure $12.9$, as $i_{B}$ varies from zero to $0.1 \mathrm{~mA}$ in $0.01-\mathrm{mA}$ increments. Let $\nu_{C E}$ vary over the range $0 \leq \nu_{C E} \leq 10 \mathrm{~V} .(b)$ Assuming $V_{c c}=10 \mathrm{~V}$ and $R_{c}=1 \mathrm{k} \Omega$ in the circuit in Figure $12.8$, superimpose the load line on the transistor characteristics in part $(a) .(c)$ Plot, on the resulting graph, the value of $i_{c}$ and $\nu_{C E}$ corresponding to $i_{6}=0.05 \mathrm{~mA}$
For a uniformly doped $\mathrm{n}^{++} \mathrm{p}^{+} \mathrm{n}$ bipolar transistor in thermal equilibrium, $(a)$ sketch the energy-band diagram, $(b)$ sketch the electric field through the device, and (c) repeat parts $(a)$ and $(b)$ for the transistor biased in the forward-active region.
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