In an ion implanter, dopant implantation of energetic B ion is done into a Si substrate with 2 μ

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In an ion implanter, dopant implantation of energetic B ion...

In an ion implanter, dopant implantation of energetic $\mathrm{B}$ ion is done into a Si substrate with $2 \mu \mathrm{m}$ oxide thickness, such that the peak B concentration becomes $5 \times 10^{18} / \mathrm{cm}^{3}$ at $0.4 \mu \mathrm{m}$ distance from the surface. For this projected range, what will be the energy and corresponding straggle? What will be the value of implant dose and beam current, if the scanning is done for $100 \mathrm{~cm}^{2}$ area with 30 sec implant time.

Key Concepts

Ion Implantation

Ion implantation is a process used in semiconductor manufacturing where dopant ions are accelerated by an electric field and implanted into a target substrate to modify its electrical properties. This process allows for precise control over the dopant concentration and depth distribution, which are critical for device performance.

Projected Range

The projected range is the average depth that ions penetrate into the substrate. It is a key parameter in ion implantation that determines where the peak concentration of dopants will be located, and it is influenced by the ion energy, the mass of the ion, and the properties of the target material.

Range Straggle

Range straggle refers to the statistical spread or variance in the penetration depth of implanted ions around the projected range. It quantifies the width of the dopant distribution profile in the substrate, reflecting the inherent randomness in ion scattering and energy loss during implantation.

Implant Dose

Implant dose is defined as the total number of dopant ions implanted per unit area, typically expressed in ions per square centimeter. It is a crucial metric for determining the extent of doping and the resulting modifications in the electrical properties of the semiconductor.

Beam Current Calculation

Beam current in ion implantation represents the rate at which dopant ions are delivered to the substrate, typically measured in amperes. It can be calculated by relating the implant dose, the scanning area, and the implantation time, thereby linking the physical delivery of ions to the operational parameters of the ion implanter.

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