In electron-beam lithography, a focused beam of electrons (produced by a scanning electron microscope) is used instead of UV light to expose photoresist. Which is capable of producing smaller features:
$100 \mathrm{eV}$ electrons or $50 \mathrm{keV}$ electrons? (In practice, the resolution of electron-beam lithography is limited by aberrations in the electron optics of the electron microscope, rather than by the wavelength of the electron
- the aberration-limited resolution is about $5 \mathrm{~nm}$.)