The depletion layer in a p-n junction diode consists of...

The depletion layer in a $p-n$ junction diode consists of layer of : (a) positively charged donors on the $p$ -side and negatively charged acceptors on the $n$ -side (b) negatively charged donors on the $p$ -side and positively charged acceptors on the $n$ -side (c) positively charged donors on the $n$ -side and negatively charged acceptors on the $p$ -side (d) negatively charged donors on the $n$ -side and positively charged acceptors on the $p$ -side

The depletion layer in a $p-n$ junction diode consists of layer of :
(a) positively charged donors on the $p$ -side and negatively charged acceptors on the $n$ -side
(b) negatively charged donors on the $p$ -side and positively charged acceptors on the $n$ -side
(c) positively charged donors on the $n$ -side and negatively charged acceptors on the $p$ -side
(d) negatively charged donors on the $n$ -side and positively charged acceptors on the $p$ -side

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Key Concepts

Doping in Semiconductors

Doping is the process of intentionally introducing impurity atoms into a semiconductor to modify its electrical characteristics. In the n-type material, donor atoms supply extra electrons and become positively charged when ionized. Conversely, in the p-type material, acceptor atoms create holes and become negatively charged upon ionization. These fixed, ionized impurities are fundamental in establishing the built-in potential and depletion layer in a p-n junction diode.

p-n Junction Diode

A p-n junction diode is formed by joining p-type and n-type semiconductor materials. The p-type region is composed of acceptor impurities that provide holes as majority carriers, while the n-type region contains donor impurities that contribute free electrons. The interface between these two distinct regions leads to the formation of a junction with unique electrical properties.

Depletion Region

The depletion region is the zone near the junction where mobile charge carriers (electrons and holes) have diffused away and recombined, leaving behind fixed ionized atoms. This region contains immobile ions that create an electric field, which is essential for the diode’s rectifying behavior by opposing further carrier diffusion.

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