The reverse biasing in junction diode (A) increase the...

The reverse biasing in junction diode
(A) increase the potential barrier
(B) increases the number of minority change carriers
(C) increases the number of majority change carriers
(D) decreases the potential diode

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Key Concepts

Junction Diode

A junction diode is a semiconductor device that consists of a p-type and an n-type material forming a p–n junction. It is fundamental in electronics for controlling the direction of current flow, with its behavior determined by the characteristics of the p–n junction such as the formation of a depletion layer and potential barrier.

Reverse Biasing

Reverse biasing refers to the application of a voltage across a diode in such a way that it widens the depletion region. In this mode, the applied voltage increases the barrier for charge carrier flow, resulting in a very small current flow primarily due to minority carriers.

Potential Barrier

In the context of a p–n junction, the potential barrier is the energy barrier formed at the junction due to the built-in electric field within the depletion region. Under reverse bias conditions, this potential barrier is increased, which further restricts the flow of majority charge carriers and contributes to the diode's rectifying behavior.

Minority Carriers

Minority carriers are the charge carriers in a semiconductor that are less abundant compared to the majority carriers. In reverse bias conditions, even though most carriers are blocked by the widened depletion region, a small current flows primarily due to the movement of these minority carriers, known as leakage current.

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