9) (30 points) A p-type (boron) diffusion is performed as follows:
Predep: 30 mins, 850°C, then the Boron source is removed, and Drive-in is performed: 40
mins, 1150°C.
(a) What is the deposited $Q_T$?
(b) What is the surface concentration after the drive-in?
(c) If the substrate is doped 2x$10^{15}$ $cm^{-3}$ phosphorus, what is the junction depth, $x_j$?
For boron: $D_o$=1.0, $E_A$=3.46, solid solubility 2.0x$10^{20}$ cm-3