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Abhishek

Abhishek

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INSTANT ANSWER

5. For a long channel \( n \)-MOSFET with \( V_{t}=1 \mathrm{~V} \), calculate the \( V_{g} \) required for an \( I_{d}\left(\right. \) sat.) of 0.1 mA and \( V_{d}( \) sat.) of 5 V . Calculate the small-signal output conductance, \( g \) and the transconductance, \( g_{m}\left(\right. \) sat. ) at \( V_{d}=10 \mathrm{~V} \). Sketch the cross section of this MOSFET and schematically show the inversion charge and depletion charge distributions for \( V_{d}=1 \mathrm{~V}, 5 \mathrm{~V} \) and 10 V . Recalculate the new \( I_{d} \) for \( V_{g}-V_{t}=3 \mathrm{~V} \) and \( V_{d}=4 \mathrm{~V} \).

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INSTANT ANSWER

(i) Consider an MOS capacitor fabricated on P-type Si substrate with a 10 doping of \( 5 \times \mathrm{I}^{16} \mathrm{~cm}^{-3} \) with oxide thickness of 10 nm and \( \mathrm{N}^{+} \)poly-gate. Find \( C_{Q 0} V_{P_{0}} \) and \( V_{i} \). (ii) The threshold and the flat band voltages of a MOS capacitor are \( \mathrm{V}_{\mathrm{t}}= \) -1.0 V and \( V_{\mathrm{EB}}=-0.5 \mathrm{~V} \), respectively. Is this capacitor created on an N type or P-type semiconductor? What is the density of minority carriers (in \( \mathrm{Clm}^{2} \) ) at the semiconductor surface when the voltage applied between the metalind semiconductor ele trodesist \( a=-0.75 \) V?

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