Q2. A Silicon bar of length L is nonuniformly doped with acceptor and maintained under equilibrium
condition at room temperature; p(x) = ni*exp((x+a)/b) as 0 ? x ? L, where a = 0.5 cm, b=0.1 cm and L=1
cm. (ni is 10$^{10}$/cm³)
a) Draw the energy band diagram of Ec, Ef, Ev, and Ei inside the bar (from x = 0 to x = L) (Hint: Ef is
a constant throughout the length L, calculate Ei Ev and EC as a function of x (from x=0 0.2L, 0.4L,
0.6L, 0.8L and 1L, table these data.)
b) Calculate the electric field inside the bar as a function of position x.
c) Give the directions of electron drift, hole drift, electron diffusion, and hole diffusion along the x-
axis.