Consider the n-channel D-MOSFET amplifier circuit. $I_{DSS}$ and $V_{P}$ vary in the ranges shown due to manufacturing variations.
$V_{DD} = 15V$
$R_1 = 2 M\Omega$
$R_D = 440 \Omega$
$C_2 = 10 \mu F$
$R_{sig} = 100 \Omega$
$C_1 = 0.1 \mu F$
$10mA \leq I_{DSS} \leq 14 mA$
$-3.5V \leq V_{P} \leq -2V$
$R_2 = 1 M\Omega$
$R_S = 360 \Omega$
$C_S = 22 \mu F$
$R_L = 200 \Omega$
Find the resulting variations in $I_D$, $g_m$, and $A_v$.
Hint: You can consider four cases, which make use of the extreme values of $I_{DSS}$ and $V_P$. This can be done by plotting four device curves, and this can be done using Excel, Matlab, or some other computer tool.) You may assume that the resistors are fixed in value.
$mA \leq I_D \leq mA$
$mS \leq g_m \leq mS$
$\leq A_v \leq$