5.10 Consider a CMOS process for which \( L_{\min }=0.18 \mu \mathrm{m}, t_{O X}=4 \mathrm{~nm}, \mu_{n}=450 \mathrm{~cm}^{2} / \mathrm{V} \cdot \mathrm{s} \), and \( V_{t}=0.5 \mathrm{~V} \).
(a) Find \( C_{O X} \) and \( k_{n}^{\prime} \).
(b) For an NMOS transistor with \( W / L=2.4 \mu \mathrm{m} / 0.18 \mu \mathrm{m} \), calculate the values of \( v_{O V}, v_{G S} \), and \( v_{D S \text { min }} \) needed to operate the transistor in the saturation region with a current \( i_{D}=0.1 \mathrm{~mA} \).
(c) For the device in (b), find the values of \( v_{O V} \) and \( v_{G S} \) required to cause the device to operate as a \( 500-\Omega \) resistor for very small \( v_{D S} \).