I want to calculate ΔG(T) given in equation 1a using equation (1b) and (1c), for a-Si from T=0 to 300K as shown in the graph. The values of So (residual entropy), Cp (specific heat), and ΔH (heat of crystallization of the amorphous phase) are given on the second page provided in the image. Please let me know, step by step integration of eq, 1a, 1b, 1c for e.g. at T=300K. The value of ΔG(T) at T=300 K according to the graph is ~ (-8.8 x 10^8) J/m3. Also, how do you convert J/mol into J/m3.
TABLE II. Thermodynamic and kinetic data for Si and Ge. Ta PHV Tea AH. S. (x) (kJ/mol) (K) (kJ/mol) /mol K) Ge 1210* 36.9* 750b 11.5* 1.66 Si 1685 50.5* 960 qS6'11 1.66
WANG - (1a) (n=H( (1b)
PHYSICAL
C J/molK)
Ter {K}
Ta/Tr
(a)
0.224+4.8(T/1210) 0.224+4.8(T/1685) OF
965h 1420 1283
0.80
S(1=-sg sg (te} Here, mepee base, and represents the the crystal n temperature of the phase.7stand for
0.76
H
melting temperature of the crystal heat of melting of the crystal kinetic crystallization temperature of the amorphous phase
AH_ S,: C,m TH
and is the residual 0 K. Using the 39, the crystal
b
summarized in Ref. of both a-Ge and a-Si ham
melting temperature of the amorphous phase From Ref. 23. Epitaxial regrowth in ion-implanted (100 samples; this work From Ref. 4. Estimated in Ref. 24. From Ref.4; measured between 200 and 500 K; extrapolated; below 55 K, C0 ' Scaled with Chen and Turnbull data for Ge according to T below 78K, C=0. Atetive uption to et sensitivity of T to the choice of From Ref. 25. From Refs. 11 and 25. IV. RESULTS FOR SI plantation and calorimetry conditions were carried out using the Si and not Ge samples. The best calorimetric data were obtained from the Z series; the U and W series were of A large number of amorphous samples on (100) substrates have been produced; their implantation schedules are listed in Table IV. The whole list of samples is shown as the. Calorimetry results experimental procedures for establishing the optimum im- Figure 11 shows the high-temperature end of a typical RAA
of i is more negative e n than that of Ce. Poh cased upon gies decn 2. SJee energies Te Gibbe ce energy G in f a ya scAt teprte cbe xsd in c of he e tly d the sce egy n=f-7s (2) Similarly, the Gibbs re energy G of an ampb Surface {A} is given by GZ=M{-7S (3) The ro d y t7nd7.civy,d The comesp and in /m give by
(c)
Yeestdb
(5) ngeedun
(2) PIG.5. (Cole Al/Ge layer sy In detail in de text. (3')
aed to the A/S
(n=
Whee V and Vesand fr hemolar volume of (Ad 2) A dt ae fci f t fgCovige f an atomic cell in contact wi vm 035, =0.33C is constant relating the surface area to the bulk volume, with an average value of 4. (3*) fwCoVia} 1o mol-9 w experimental values of Td Uing Eq.nd 3the face energy With known ratu T, the surface energy of (And{At peratures between 0 and 300*C e ecn o i ig50.T (3, respective 945436-8
