(5.8) Consider a CMOS process for which Lin=0.25 μm, t=6 nm, μ=460 cm/Vs, and V=0.5 V.
a) Find C and k.
b) For an NMOS transistor with W/L=20 μm/0.25 μm, calculate the values of Vov, Vds, and Vgsmin needed to operate the transistor in the saturation region with a dc current I=0.5 mA.
c) For the device in b, find the values of Vov and Vgs required to cause the device to operate as a 100 Ω resistor for very small Vds.
(5.9) A p-channel MOSFET with a threshold voltage Vth=-0.7 V has its source connected to ground.
a) What should the gate voltage be for the device to operate with an overdrive voltage of Vov=0.4 V?
b) With the gate voltage as in a, what is the highest voltage allowed at the drain while the device operates in the saturation region?
c) If the drain current obtained in b is 0.5 mA, what would the current be for Vds=-20 mV and for Vds=-2 V?
(5.15) An NMOS transistor having Vth=0.8 V is operated in the triode region with Vds small. With Vgs=1.2 V, it is found to have a resistance rds of 1 kΩ. What value of Vgs is required to obtain rds=200 Ω? Find the corresponding resistance values obtained with a device having twice the value of W.