2) Consider an n-channel JFET with $V_{PO} = 6$ V and $I_{DSS} = 20$ mA. Assume breakdown does
not occur. If the JFET is in the saturation region, calculate the source-gate voltage $V_{GS}$ at
which the source-drain current $I_{DS} = (0.4)I_{DSS} = 8$ mA. (5 pts.)
3) The parameters for an n-channel JFET are $I_{DSS} = 12$ mA, $V_P = -4.5$ V. Determine $V_{DS(sat)}$,
for $V_{GS} = -1.2$ V, and calculate $I_D$ for $V_{DS} > V_{DS(sat)}$. (10 pts.)