Question 1/1
1 point
A p-doped wafer (boron concentration of 5 \( \mathrm{E} 17 / \mathrm{cm}^{\wedge} 3 \) ) that is \( 200 \mu \mathrm{m} \) thick completely and homogenously absorbs a beam of photons, generating 2E19 excess free electrons \( (\Delta n) \) per cubic centimetre and per second.
If the implied open-circuit voltage is \( 0.650 \mathrm{~V} \), what is the bulk carrier lifetime (in s) in the wafer? (Please write the anwser in a numerical format and without the units)
You can assume the following values:
Bandgap of silicon at room temperature : EG = \( 1.1 \mathrm{eV} \)
For silicon at RT, ni \( =1.5 \mathrm{E} 10 / \mathrm{cm}^{\wedge} 3 \)
Use the following values of band-edge effective densities of states for silicon:
\[
\mathrm{NC}=3.2 \mathrm{E} 19 / \mathrm{cm}^{\wedge} 3 \mathrm{NV}=1.8 \mathrm{E} 19 / \mathrm{cm}^{\wedge} 3
\]
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