Problem 1.
A Si n-MOSFET has gate length, L= 1 µm, gate width, Z=20 µm, oxide thickness
is 100 A°, and the substrate doping = $10^{16}$ cm$^{-3}$. The device gate oxide is silicon
dioxide, SiO$_2$, gate metal is n?-Polysilicon, and total oxide interface charges is
$5 \times 10^{10}$ qC/cm$^2$.
Calculate the intrinsic carrier concentration, ($n_i$), $W_m$, the flat band voltage ($V_{FB}$),
and the threshold voltage ($V_T$). If $V_G$= 5V, find the saturation current, the current at
$V_D$= 1 V, and the current at $V_D$=10V. Compare the current at 10 V (call it $I_{D10}$) and
the saturation current (call it $I_{Dsat}$).