Que-2, one Step in manufacturing transistors, which fromtha
as electronic scottches in integrated circuits, involves diffusing
atens into a semiconductor material Juch as silicon,
impurity
Suppose a si wofer 0.1 cm. thick, which originally contains
one patom for every lo million si atoms, is treated
Jo that the there are 400 phosphorous atoms for
every lo million Si atoms at the surface. Calulate the
concentration gradient in @ in atomic %./cm and
in atoms/cm².com
The lattice parameter of Si is 5.4307 A.
finitial and surface compositions in