Problem 3 - High-f MOSFET (6pts): For an n-channel MOSFET with $t_{ox} = 10$ nm, $L = 1 \mu m$, $W = 10 \mu m$,
$L_{ov} = 0.05 \mu m$, $C_{sbo} = C_{dbo} = 10$ ff, $V_o = 0.6$ V, $V_{SB} = 1$ V, and $V_{DS} = 2$ V, calculate the following capacitances
when the transistor is operating in saturation: $C_{ox}$, $C_{ov}$, $C_{gs}$, $C_{gd}$, $C_{sb}$, and $C_{db}$. Hint: assume that the dielectric
material between the gate and the channel is silicon dioxide.
Problem 4 - High-f MOSFET (3pts): Calculate $f_T$ (the unity gain frequency) for an n-channel MOSFET
which has capacitances $C_{gs} = 24.7$ fF and $C_{gd} = 1.72$ fF. Assume that the MOSFET is operating at 100 $\mu A$,
and that $k_n' = 160 \mu A/V^2$.
