1- To forward-bias a diode:
(a) an external voltage is applied that is positive at the anode and negative at the cathode
(b) an external voltage is applied that is negative at the anode and positive at the cathode
(c) an external voltage is applied that is positive at the p region and negative at the n region
(d) answers (a) and (c)
2- For a silicon diode, the value of the forward-bias voltage typically:
(a) must be greater than 0.3 V
(b) must be greater than 0.7 V
(c) depends on the width of the depletion region
(d) depends on the concentration of majority carriers
3- When forward-biased, a diode:
(a) conducts current
(b) blocks current
(c) has a high resistance
(d) drops large voltage
4- A diode is normally operated in:
(a) the forward-bias region
(b) the reverse-bias region
(c) reverse breakdown
(d) either (b) or (c)
5- In the complete diode model:
(a) the barrier potential is taken into account
(b) the forward dynamic resistance is taken into account
(c) the reverse resistance is taken into account
(d) all of these
6- The average value of a half-wave rectified voltage with a peak value of 200 V is:
(a) 63.7 V
(b) 127.2 V
(c) 141 V
(d) 0 V
