Question

1) Using the parameters given, calculate the current through two nMOS transistors in series (see Figure below), when the drain of the top transistor is tied to V_DD, the source of the bottom transistor is tied to V_SS = 0 and their gates are tied to V_DD. The substrate is also tied to V_SS = 0 V. Assume that W/L = 10 for both transistors and L = 4 µm. k' = 168 µA/V^2 V_TO = 0.48 V ? = 0.52 V^{1/2} |2?_f| = 1.01 V Hint: The solution requires several iterations, and the body effect on threshold voltage has to be taken into account. Start with the KCL equation. +1 V 1 V I_D = ?

          1) Using the parameters given, calculate the current through two nMOS transistors in series (see Figure below), when the drain of the top transistor is tied to V_DD, the source of the bottom transistor is tied to V_SS = 0 and their gates are tied to V_DD. The substrate is also tied to V_SS = 0 V. Assume that W/L = 10 for both transistors and L = 4 µm.

k' = 168 µA/V^2
V_TO = 0.48 V
? = 0.52 V^{1/2}
|2?_f| = 1.01 V

Hint: The solution requires several iterations, and the body effect on threshold voltage has to be taken into account. Start with the KCL equation.

+1 V
1 V
I_D = ?

1) Using the parameters given, calculate the current through two nMOS transistors in series (see Figure below), when the drain of the top transistor is tied to VDD, the source of the bottom transistor is tied to VSS = 0 and their gates are tied to VDD. The substrate is also tied to VSS = 0 V. Assume that W/L = 10 for both transistors and L = 4 µm.

k' = 168 µA/V^2
VTO = 0.48 V
? = 0.52 V^1/2
|2?f| = 1.01 V

Hint: The solution requires several iterations, and the body effect on threshold voltage has to be taken into account. Start with the KCL equation.

+1 V
1 V
ID = ?

Added by Gary M.

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