6. The figure beside is a dimensioned energy band diagram for an
ideal MOS-C operated at T=300K with VG = 0. Note that EF =
E; at the Si-SiO2 interface.
Answer the following questions based on the figure beside.
(i) Do equilibrium condition prevail inside the
semiconductor?
(ii) ФF = ?
(iii) Фs = ?
(iv) VG = ?
(v) Electron concentration in the bulk of the semiconductor = ?
(vi) Electron concentration at the Si-SiO2 interface in the semiconductor = ?
Marks: 0.5+0.5+0.5+0.5+2+1 = 5
$E_F$
0.6 eV
$E_{FM}$
$E_C$
0.56 eV
$E_i$
$E_F$
0.30 eV
$E_V$