Question

3.(18) The energy band diagram of an ideal MOS capacitor structure with oxide thickness, tox = 0.2m, operating at the temperature T = 300K is sketched below. Note that the voltage caused band bending such that EF = Ei at the oxide-silicon interface. Efm Ec Ef 0.29[eV] Ei Ev 0.56[eV] -tox 0 xd x a) What is the surface potential, ?s ? b) Sketch the electrostatic potential, ?, in the semiconductor as a function of the position, x. c) Sketch the electric field, E, in the semiconductor as a function of the position, x. d) What is the electron concentration at the oxide-silicon interface? e) Roughly sketch the electron concentration, n versus position, x, in the semiconductor. f) What is the doping level of the bulk?

          3.(18) The energy band diagram of an ideal MOS capacitor structure with oxide thickness,
tox = 0.2m, operating at the temperature T = 300K is sketched below. Note that the
voltage caused band bending such that EF = Ei at the oxide-silicon interface.

Efm
Ec
Ef
0.29[eV]
Ei
Ev
0.56[eV]
-tox 0 xd x

a) What is the surface potential, ?s ?
b) Sketch the electrostatic potential, ?, in the semiconductor as a function of the
position, x.
c) Sketch the electric field, E, in the semiconductor as a function of the position, x.
d) What is the electron concentration at the oxide-silicon interface?
e) Roughly sketch the electron concentration, n versus position, x, in the semiconductor.
f) What is the doping level of the bulk?

3.(18) The energy band diagram of an ideal MOS capacitor structure with oxide thickness,
tox = 0.2m, operating at the temperature T = 300K is sketched below. Note that the
voltage caused band bending such that EF = Ei at the oxide-silicon interface.

Efm
Ec
Ef
0.29[eV]
Ei
Ev
0.56[eV]
-tox 0 xd x

a) What is the surface potential, ?s ?
b) Sketch the electrostatic potential, ?, in the semiconductor as a function of the
position, x.
c) Sketch the electric field, E, in the semiconductor as a function of the position, x.
d) What is the electron concentration at the oxide-silicon interface?
e) Roughly sketch the electron concentration, n versus position, x, in the semiconductor.
f) What is the doping level of the bulk?

Added by Sheila B.

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