Problem 4: Non-Uniformly Doped Semiconductor
A silicon sample maintained at 300K is characterized by the energy band-diagram below:
a) Do equilibrium conditions prevail? How do you know?
b) Sketch the electrostatic potential V(x) inside the semiconductor as a function of x.
c) Sketch the electric field Ę(x) inside the semiconductor as a function of x.
d) Suppose the carrier pictured in the diagram moves between x = 0 and x = L without changing its total energy. Sketch the kinetic energy and potential energy of the carrier as a function of x.
e) Roughly sketch n and p versus x
f) On the same set of coordinates, make a rough sketch of the electron drift-current density and the electron diffusion current density as a function of position. For each drawing, briefly explain how you arrived at your sketch.