Question

A young designer, aiming to develop intuition con cerming conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting bar $10 \mu$ m long, $3 \mu \mathrm{m}$ wide, and $1 \mu \mathrm{m}$ thick, made of various materials. The designer considers: (c) $n$ -doped silicon with $N_{D}=10^{18} / \mathrm{cm}^{3}$ (d) $p$ -doped silicon with $N_{A}=10^{16} / \mathrm{cm}^{3}$ (e) aluminum with resistivity of $2.8 ~ \mu \Omega \cdot \mathrm{cm}$ Find the resistance in each case. For intrinsic silicon, use the data in Table 3.1 . For doped silicon, assume $\mu_{n}=2.5 \mu_{p}=1200 \mathrm{cm}^{2} / \mathrm{V} \cdot \mathrm{s} .(\text { Recall that } R=\rho L / A)$

          A young designer, aiming to develop intuition con cerming conducting paths within an integrated circuit, examines the end-to-end resistance of a connecting bar $10 \mu$ m long, $3 \mu \mathrm{m}$ wide, and $1 \mu \mathrm{m}$ thick, made of various materials. The designer considers:
(c) $n$ -doped silicon with $N_{D}=10^{18} / \mathrm{cm}^{3}$
(d) $p$ -doped silicon with $N_{A}=10^{16} / \mathrm{cm}^{3}$
(e) aluminum with resistivity of $2.8 ~ \mu \Omega \cdot \mathrm{cm}$
Find the resistance in each case. For intrinsic silicon, use the data in Table 3.1 . For doped silicon, assume $\mu_{n}=2.5 \mu_{p}=1200 \mathrm{cm}^{2} / \mathrm{V} \cdot \mathrm{s} .(\text { Recall that } R=\rho L / A)$

Added by Caroline C.

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