An NMOS transistor, operating in the linear-resistance region with $v_{D S}=0.1 \mathrm{V},$ is found to conduct $60 \mu \mathrm{A}$ for $v_{G s}=2 \mathrm{V}$ and $160 \mu \mathrm{A}$ for $v_{\mathrm{CS}}=4 \mathrm{V}$. What is the apparent value of threshold voltage $V_{t} ?$ If $k_{n}^{\prime}=50 \mu \mathrm{A} / \mathrm{V}^{2},$ what is the device $W / L$ ratio? What current would you expect to flow with $v_{\mathrm{GS}}=3 \mathrm{V}$ and $v_{\mathrm{DS}}=0.15 \mathrm{V} ?$ If the device is operated at $v_{G S}=3 \mathrm{V}$, at what value of $v_{\text {DS }}$ will the drain end of the MOSFET channel just reach pinch-off, and what is the corresponding drain current?