In this problem, we contrast two BJT integrated-circuit fabrication technologies: For the "old" technology, a typical
mn tran has $I_{S}=5 \times 10^{-15}$ A, and for the "new" technology a typical $n p n$ transistor has $I_{S}=5 \times 10^{-18}$ A. These typical devices have vastly different junction areas and base width. For our purpose here we wish to determine the $v_{B E}$ required to establish a collector current of $1 \mathrm{mA}$ in each of the two typical devices. Assume active-mode operation.