Question

1) (a) In PN junction, why is the reverse-bias current expected to be small in magnitude and to saturate at small reverse voltage? (b) In PN junction, under revise biasing, what processes occur in the quasineutral regions adjacent to the depletion region edges? It is drift and diffusion, diffusion and recombination, generation and diffusion, or generation and drift? (c) In BJT, define in words (no equations) what is meant by ?emitter efficiency?. (d) In the ideal transistor analysis, what assumptions are made about the regional (E B C) doping concentrations and quasineutral widths? (e) What are the differences between a BJT and HBT? (f) In a p+-n junction, the n-doping Nd is doubled. How do the following change if everything else remains unchanged? Indicate only increase or decrease. (f1) Junction capacitance (f2) Built-in potential (f3) Breakdown voltage (f4) Ohmic losses (g) An idea MS contact is formed between a metal and a semiconductor with ?M =?. Under what conditions will the contact be ohmic-like, and under what conditions will the contact be rectifying?

          1) (a) In PN junction, why is the reverse-bias current expected to be small in magnitude and to saturate at small reverse voltage?
(b) In PN junction, under revise biasing, what processes occur in the quasineutral regions adjacent to the depletion region edges? It is drift and diffusion, diffusion and recombination, generation and diffusion, or generation and drift?
(c) In BJT, define in words (no equations) what is meant by ?emitter efficiency?.
(d) In the ideal transistor analysis, what assumptions are made about the regional (E B C) doping concentrations and quasineutral widths?
(e) What are the differences between a BJT and HBT?
(f) In a p+-n junction, the n-doping Nd is doubled. How do the following change if everything else remains unchanged? Indicate only increase or decrease.
(f1) Junction capacitance
(f2) Built-in potential
(f3) Breakdown voltage
(f4) Ohmic losses
(g) An idea MS contact is formed between a metal and a semiconductor with ?M =?. Under what conditions will the contact be ohmic-like, and under what conditions will the contact be rectifying?

1) (a) In PN junction, why is the reverse-bias current expected to be small in magnitude and to saturate at small reverse voltage?
(b) In PN junction, under revise biasing, what processes occur in the quasineutral regions adjacent to the depletion region edges? It is drift and diffusion, diffusion and recombination, generation and diffusion, or generation and drift?
(c) In BJT, define in words (no equations) what is meant by ?emitter efficiency?.
(d) In the ideal transistor analysis, what assumptions are made about the regional (E B C) doping concentrations and quasineutral widths?
(e) What are the differences between a BJT and HBT?
(f) In a p+-n junction, the n-doping Nd is doubled. How do the following change if everything else remains unchanged? Indicate only increase or decrease.
(f1) Junction capacitance
(f2) Built-in potential
(f3) Breakdown voltage
(f4) Ohmic losses
(g) An idea MS contact is formed between a metal and a semiconductor with ?M =?. Under what conditions will the contact be ohmic-like, and under what conditions will the contact be rectifying?

Added by Jamie T.

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