An abrupt Si PN$^+$ junction has $N_A = 5 \times 10^{15} \text{cm}^{-3}$, $N_D = 1 \times 10^{18} \text{cm}^{-3}$, and has a cross sectional area of the junction is $1 \times 10^{-4} \text{cm}^2$. What is the electron current at the edge of the transition region in the P material of the diode with a forward bias of 0.8V?
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An abrupt Si PN+ junction means that there is a sharp boundary between the P-type and N-type regions of the semiconductor material. This boundary is formed by doping the silicon crystal with impurities to create regions with excess electrons (N-type) and regions Show more…
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