Consider a silicon PN junction at room temperature for zero applied voltage with the impurity doping profile shown in the Figure.
a) [10 points] Calculate the built-in potential Vpi for the p type junction.
b) [10 points] Calculate the value of x and xp- for the n type junction.
c) [10 points] Calculate the value of peak electric field for this junction.
d) [10 points] Plot the electric field versus distance through the junction. Show all detailed parameters.
e) [10 points] How is the electric field changing in the depletion region of the PN junction? Explain your answer.