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Question 3 Not yet answered Marked out of 35.00 Flag question Question 3.[35 points], Detailed solution is required At T=300 K, a GaAs pn junction at 0.15 Volt forward bias is doped at $N_A = 4 \times 10^{17} \text{cm}^{-3}$ and $N_D = 10^{15} \text{cm}^{-3}$. Given that $\tau_n = \tau_p = 10^{-6} \text{s}$; answer the following: a) [10 points] At the edge of the depletion region; calculate number of electrons and number of holes in both sides. b) [15 points] Calculate the reverse saturation current density. c) [10 points] If the cross sectional area of the diode is 0.5 cm$^2$; calculate the diode current.

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Question 3.[35 points], Detailed solution is required
At T=300 K, a GaAs pn junction at 0.15 Volt forward bias is doped at $N_A = 4 \times 10^{17} \text{cm}^{-3}$
and $N_D = 10^{15} \text{cm}^{-3}$. Given that $\tau_n = \tau_p = 10^{-6} \text{s}$; answer the following:
a) [10 points] At the edge of the depletion region; calculate number of electrons and
number of holes in both sides.
b) [15 points] Calculate the reverse saturation current density.
c) [10 points] If the cross sectional area of the diode is 0.5 cm$^2$; calculate the diode
current.

Question 3
Not yet
answered
Marked out of
35.00
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Question 3.[35 points], Detailed solution is required
At T=300 K, a GaAs pn junction at 0.15 Volt forward bias is doped at NA = 4 × 10^17cm^-3
and ND = 10^15cm^-3. Given that = = 10^-6s; answer the following:
a) [10 points] At the edge of the depletion region; calculate number of electrons and
number of holes in both sides.
b) [15 points] Calculate the reverse saturation current density.
c) [10 points] If the cross sectional area of the diode is 0.5 cm^2; calculate the diode
current.

Added by Jennifer A.

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