Consider a tungsten barrier on silicon with a measured barrier height of eBn = 0.67 eV and an effective Richardson constant of A* = 114 A/K^2-cm^2 at 300K. A Si pn junction has Na = 10^18 cm^-3, Nd = 10^16 cm^-3, Dp = 10 cm^2/s, Dn = 25 cm^2/s, p0 = n0 = 10^-7 s. From Example 9.5, the reverse-saturation current density for the Schottky barrier diode is JST = 5.98 x 10^-5 A/cm^2 and the reverse-saturation current density of the pn junction is Js = 3.66 x 10^-11 A/cm^2. Using these parameters, determine the forward-bias voltages required to produce a current of 10A in each diode. Assume each cross-sectional area is 10^-4 cm^2.