Questions one consider a uniformly doped silicon bipolar...

Question One: Consider a uniformly doped silicon bipolar transistor at T=300K with a base doping of Na = 5 x 10^16 cm^-3 and collector doping of 2 x 10^16 cm^-3. Assume the metallurgical base width is 70 μm. Calculate the change in neutral base width at the C-B voltage of 2V: (Hint: Calculate depletion width to the base side at V = 2V and subtract from the original length).

A uniformly doped pnp silicon bipolar transistor has a base doping of $N_{E}=10^{16} \mathrm{~cm}^{-3}$, a collector doping of $N_{C}=10^{15} \mathrm{~cm}^{-3}$, a metallurgical base width of $x_{\overline{B 0}}=0.70 \mu \mathrm{m}$, a base minority carrier diffusion coefficient of $D_{E}=10 \mathrm{~cm}^{2} / \mathrm{s}$, and a B-E cross-sectional area of $\mathrm{A}_{B \mathcal{E}}=10^{-4} \mathrm{~cm}^{2}$. The transistor is biased in the forward-active mode with $V_{E B}=0.625 \mathrm{~V}$. Neglecting the $\mathrm{B}-\mathrm{E}$ space charge width and assuming $x_{E} \ll L_{6},(a)$ detemine the change in neutral base width as $V_{\text {ic }}$ changes from 1 to $5 \mathrm{~V},(b)$ find the corresponding change in collector current, ( $c$ ) estimate the Early voltage, and $(d)$ find the output resistance.

Question

Please give Ace some feedback