The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of µn = 1300 cm2/V-s and a hole mobility of µp = 450 cm2/V- s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?
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The conductivity can be calculated using the formula: σ = q * (n * µn + p * µp) where q is the charge of an electron (1.6 * 10^-19 C), n is the concentration of electrons, p is the concentration of holes, µn is the electron mobility, and µp is the hole Show more…
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The concentration of donor impurity atoms in silicon is $N_{d}=10^{15} \mathrm{~cm}^{-3}$. Assume an electron mobility of $\mu_{n}=1300 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}$ and a hole mobility of $\mu_{p}=450 \mathrm{~cm}^{2} / \mathrm{V}-\mathrm{s}$. (a) Calculate the resistivity of the material. ( $b$ ) What is the conductivity of the material?
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