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Dania Obeidat

Dania O.

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Aparna Shakti verified

Numerade educator

The specific surface area of an NP is defined as the total surface area per unit mass, usually measured in m²/g. Calculate the specific surface area for a cubic MgO NP with 3 nm diameter. Note the density of MgO is 3.58 g/cm³. (2 points)

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Aparna Shakti verified

Numerade educator

The specific surface area of an NP is defined as the total surface area per unit mass, usually measured in m²/g. Calculate the specific surface area for a cubic MgO NP with 3 nm diameter. Note the density of MgO is 3.58 g/cm³. (2 points)

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Frank Deng verified

Numerade educator

The electron diffusion current density in a semiconductor is a constant and is given by Jn = -2 A/cm2 . The electron concentration at x = 0 is n(0) = 10^15 cm-3 . (a) Calculate the electron concentration at x = 20 µm if the material is silicon with Dn = 30 cm2 /s. (b) Repeat part (a) if the material is GaAs with Dn = 230 cm2 /s.

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Eduard Sanchez verified

Numerade educator

The steady-state electron distribution in silicon can be approximated by a linear function of x. The maximum electron concentration occurs at x = 0 and is n(0) = 2 x 10^16 cm-3 . At x = 0.012 cm, the electron concentration is 5 = 10^15 cm-3 . If the electron diffusion coefficient is Dn = 27 cm2 /s, determine the electron diffusion current density.

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Eduard Sanchez verified

Numerade educator

Assume that, in an n-type gallium arsenide semiconductor at T = 300 K, the electron concentration varies linearly from 1 x 10^18 to 7 x 10^17 cm-3 over a distance of 0.10 cm. Calculate the diffusion current density if the electron diffusion coefficient is Dn = 225 cm2 /s

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Khoobchandra Agrawal verified

Numerade educator

Consider silicon at T = 300 K. Assume the electron mobility is µn = 1350 cm2/V-s. The kinetic energy of an electron in the conduction band is (1/2) mn* vd2 , where mn∗is the effective mass and vd is the drift velocity. Determine the kinetic energy of an electron in the conduction band if the applied electric field is 10 V/ cm.

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Khoobchandra Agrawal verified

Numerade educator

Consider a semiconductor that is uniformly doped with Nd = 10^14 cm-3 and Na = 0, with an applied electric field of E = 100 V/cm. Assume that n = 1000 cm2/V-s and µp = 0. Also assume the following parameters: Nc = 2 x 10^19 (at T = 300 k) cm-3 Nv = 1 x 10^19 (at T = 300 k) cm-3 Eg = 1.10 eV, Calculate the electric-current density at T = 300 K.

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Khoobchandra Agrawal verified

Numerade educator

The concentration of donor impurity atoms in silicon is Nd = 1015 cm-3. Assume an electron mobility of µn = 1300 cm2/V-s and a hole mobility of µp = 450 cm2/V- s. (a) Calculate the resistivity of the material. (b) What is the conductivity of the material?

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Khoobchandra Agrawal verified

Numerade educator

A p-type silicon material is to have a conductivity of σ = 1.80 (Ω- cm)-1. If the mobility values are µn = 1250 cm2/V-s and µ p = 380 cm2/V-s, what must be the acceptor impurity concentration in the material?

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Derrick Danso verified

Numerade educator

3.3 A particle with mass m = 9.1 x 10-31 kg is confined within a one - dimensional potential box with length L and infi nite potential on both sides . Starting from the ground state ( n = 1 ) , among the spectral lines that the particle can absorb at room temperature are two adjacent spectral lines with wavelength 1.0304 x 10-7 m and 5.4953 × 10-8 m . Find the length L.

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