Question

The energy band diagram for a forward-biased Si pn-junction diode maintained under steady-state conditions at room temperature (T = 300K) is pictured below. Note that $E_{FN} - E_i = E_i - E_{FP} = E_G/4$ For the particular situation pictured above, and assuming single-level R-G center statistics, $\tau_n = \tau_p = \tau$, and $E_t' = E_i$, show that the steady state net recombination rate inside the electrostatic depletion region (between $-x_p$ and $x_n$) can be simplified to $R \approx \frac{n_i}{\tau} \left[ \frac{e^{E_G/4kT}}{e^{(E_{FN}-E_i)/kT} + e^{(E_i-E_{FP})/kT}} \right]$ and plot $R/(n_i/\tau)$ versus x between $-x_p$ and $x_n$ assuming $E_i$ variation is approximately linear between these two points. What was the purpose of this problem?

          The energy band diagram for a forward-biased Si pn-junction diode maintained under steady-state conditions at room temperature (T = 300K) is pictured below.
Note that $E_{FN} - E_i = E_i - E_{FP} = E_G/4$

For the particular situation pictured above, and assuming single-level R-G center statistics, $\tau_n = \tau_p = \tau$, and $E_t' = E_i$, show that the steady state net recombination rate inside the electrostatic depletion region (between $-x_p$ and $x_n$) can be simplified to

$R \approx \frac{n_i}{\tau} \left[ \frac{e^{E_G/4kT}}{e^{(E_{FN}-E_i)/kT} + e^{(E_i-E_{FP})/kT}} \right]$

and plot $R/(n_i/\tau)$ versus x between $-x_p$ and $x_n$ assuming $E_i$ variation is approximately linear between these two points. What was the purpose of this problem?

The energy band diagram for a forward-biased Si pn-junction diode maintained under steady-state conditions at room temperature (T = 300K) is pictured below.
Note that EFN - Ei = Ei - EFP = EG/4

For the particular situation pictured above, and assuming single-level R-G center statistics, = = τ, and Et' = Ei, show that the steady state net recombination rate inside the electrostatic depletion region (between -xp and xn) can be simplified to

R ≈(ni)/(τ)[ (e^EG/4kT)/(e^(EFN-Ei)/kT + e^(Ei-EFP)/kT)]

and plot R/(ni/τ) versus x between -xp and xn assuming Ei variation is approximately linear between these two points. What was the purpose of this problem?

Added by Andrew M.

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