We make a Si bar with a p-type doping of 2 × 10^16 cm^-3 on the left half and a p-type doping of

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We make a Si bar with a p-type doping of $2 \times 10^{16} \text{ cm}^{-3}$ on the left half and a p-type doping of $10^{18} \text{ cm}^{-3}$ on the right side. Sketch the equilibrium band diagram, with precise values marked off, far from the doping transition at 600 K when the intrinsic carrier concentration is $10^{16} \text{ cm}^{-3}$. (Note: This is p type on both sides. Such a junction is known as a high-low junction rather than a p-n junction. Observe that the doping level is comparable to $n_i$ on the left side! Do not worry about the exact details right near the doping transition!)

          We make a Si bar with a p-type doping of $2 \times 10^{16} \text{ cm}^{-3}$ on the left half and a p-type doping of $10^{18} \text{ cm}^{-3}$ on the right side. Sketch the equilibrium band diagram, with precise values marked off, far from the doping transition at 600 K when the intrinsic carrier concentration is $10^{16} \text{ cm}^{-3}$. (Note: This is p type on both sides. Such a junction is known as a high-low junction rather than a p-n junction. Observe that the doping level is comparable to $n_i$ on the left side! Do not worry about the exact details right near the doping transition!)

We make a Si bar with a p-type doping of 2 × 10^16 cm^-3 on the left half and a p-type doping of 10^18 cm^-3 on the right side. Sketch the equilibrium band diagram, with precise values marked off, far from the doping transition at 600 K when the intrinsic carrier concentration is 10^16 cm^-3. (Note: This is p type on both sides. Such a junction is known as a high-low junction rather than a p-n junction. Observe that the doping level is comparable to ni on the left side! Do not worry about the exact details right near the doping transition!)

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