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Solid State Electronic Devices

Ben G. Streetman, Sanjay Kumar Banerjee

Chapter 9

Integrated Circuit - all with Video Answers

Educators

Chapter Questions

00:41

Problem 1

In a uniform p-type Si sample, As is diffused to have a donor profile of $10^{18} / \mathrm{cm}^{3}$, where acceptor concentration becomes negligible in comparison of donor concentration. Find the resulting value of the sheet resistance of the diffused layer up to the junction depth of $5 \mu \mathrm{m}$ of the device. If the mobility for electrons is $\mu_{n}=500 \mathrm{~cm}^{2} / \mathrm{V}$ -sec, then what will be the value for the conductivity?

Chai Santi
Chai Santi
Numerade Educator
01:09

Problem 2

A typical sheet resistance of a base diffusion layer is $200 \Omega /$ square.
(a) What should be the aspect ratio of a $10-\mathrm{k} \Omega$ resistor, using this diffusion?
(b) Draw a pattern for this resistor (see Fig. 9-12b) which uses little area for a width $w=5 \mu \mathrm{m}$.

Salamat Ali
Salamat Ali
Numerade Educator
04:12

Problem 3

A $3-\mu \mathrm{m}$ n-type epitaxial layer $\left(N_{d}=10^{16} \mathrm{~cm}^{-3}\right)$ is grown on a p-type Si substrate. Areas of the $\mathrm{n}$ layer are to be junction isolated (see Fig. 9-11a) by a boron diffusion at $1200^{\circ} \mathrm{C}\left(D=2.5 \times 10^{-12} \mathrm{~cm}^{2} / \mathrm{s}\right)$. The surface boron concentration is held constant at $10^{20} \mathrm{~cm}^{-3}$ (see Prob. 5.2).
(a) What time is required for this isolation diffusion?
(b) How far does an Sb-doped buried layer $\left(D=2 \times 10^{-13} \mathrm{~cm}^{2} / \mathrm{s}\right)$ diffuse into the epitaxial layer during this time, assuming the concentration at the substrate-epitaxial boundary is constant at $10^{20} \mathrm{~cm}^{-3}$ ?

Narayan Hari
Narayan Hari
Numerade Educator
03:11

Problem 4

A $500-\mu$ m-thick p-type Si wafer with a doping level of $1 \times 10^{15} \mathrm{~cm}^{-3}$ has a certain region in which we do a constant source solid-solubility-limited P diffusion, resulting in a junction depth of $0.8 \mu \mathrm{m}$ and a surface concentration of $6 \times 10^{19} \mathrm{~cm}^{-3}$. We do sheet resistance measurements on the two parts of the wafer. What is the measured sheet resistance of the p-type part? If we have a sheet resistance of $90 \Omega /$ square in the n-type part, what is the average resistivity there?

Chai Santi
Chai Santi
Numerade Educator