A strip of doped silicon 260 μm wide contains 8.8 ×10^22 conduction electrons per cubic meter an

step 1 We have the current to be equal to N -E -A -V -D equals N -E. The area can be written as thickne

A strip of doped silicon 260 μm wide contains 8.8 ×10^22...

A strip of doped silicon $260 \mu \mathrm{m}$ wide contains $8.8 \times 10^{22}$ conduction electrons per cubic meter and an insignificant number of holes. When the strip carries a current of $130 \mu \mathrm{A},$ the drift speed of the electrons is $44 \mathrm{cm} / \mathrm{s} .$ What is the thickness of the strip?

Key Concepts

Cross-Sectional Geometry

Understanding the cross-sectional geometry of a conductor involves analyzing its dimensions, typically width and thickness, to determine the area available for current flow. This concept is important because the physical dimensions of a conductor directly affect its electrical conduction properties by influencing the current density and the resulting macroscopic current.

Drift Velocity

Drift velocity is the average velocity attained by charged particles, like electrons, in a material due to an applied electric field. It is a crucial concept in understanding how microscopic carrier motion results in a macroscopic current in conductive materials.

Charge Carrier Concentration

Charge carrier concentration refers to the number of charge carriers (typically electrons or holes) per unit volume in a material. This value is essential for determining the material's electrical properties and directly influences the magnitude of the electric current when the carriers move.

Current Equation in Terms of Drift Velocity

The relationship I = n q v_d A connects the macroscopic current with microscopic properties, where I is the current, n is the charge carrier concentration, q is the charge of each carrier, v_d is the drift velocity, and A is the cross-sectional area through which the current flows. This equation is fundamental for linking the drift behavior of electrons to the overall current in a conductor.

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