Question
Augment the design of the folded-cascode opamp in Example $6.9$ to replace $I_{\text {bias }}$ with the wide-swing cascode bias circuit of Fig. $6.12$ where $\mathrm{n}=1$ and $\mathrm{I}_{\text {in }}=\mathrm{I}_{\text {bias }}=20 \mu \mathrm{A}$. Next, replace the tail current source $\mathrm{I}_{\text {bias } 2}$ with a NMOS transistor biased by the same wide-swing bias circuit. Finally, introduce additional circuitry to generate the required bias voltage $\mathrm{V}_{\mathrm{B} 1}$. Give the sizes of all transistors.
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9. Identify the key components, including the input stage, the cascode stage, and the output stage. Note the role of the bias current \( I_{\text{bias}} \) in setting the operating point of the transistors. Show more…
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Consider a silicon pn junction diode with an applied reverse-biased voltage of $V_{R}=$ 5V. The doping concentrations are $N_{a}=N_{d}=4 \times 10^{16} \mathrm{~cm}^{-3}$ and the cross-sectional area is $A=10^{-4} \mathrm{~cm}^{2}$. Assume minority carrier lifetimes of $\tau_{0}=\tau_{n 0}=\tau_{p 0}=10^{-7} \mathrm{~s}$. Calculate the ( $a$ ) ideal reverse-saturation current, (b) reverse-biased generation current, and ( $c$ ) the ratio of the generation current to ideal saturation current.
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