In a pn junction LED, consider a point source in the semiconductor at the junction and assume that photons are emitted uniformly in all directions. Show that (neglecting photon absorption) the external quantum efficiency of the LED is given by
$$
\eta_{\mathrm{ext}}=\frac{2 \bar{n}_{1} \bar{n}_{2}}{\left(\bar{n}_{1}+\bar{n}_{2}\right)^{2}}\left(1-\cos \theta_{c}\right)
$$
where $\bar{n}_{1}$ and $\bar{n}_{2}$ are the index of refraction parameters for the air and semiconductor, respectively, and $\theta_{c}$ is the critical angle.