Match each characteristic, listed (a) through (n), with the...

Match each characteristic, listed (a) through (n), with the appropriate structure(s), listed I through V. More than one structure may apply to each. (a) conducts when $V_{G S}$ is positive (b) hole current flows when transistor is $\mathrm{ON}$ (c) electron current flows when transistor is $\mathrm{ON}$ (d) conducts when $V_{G S}=0$ (e) conducts when $V_{G S}$ is negative (f) turns OFF through the repulsion of electrons (g) turns OFF through the repulsion of holes (h) conducting channel formed during fabrication (i) conducting channel formed by biasing the gate (j) turns ON through the attraction of electrons (k) turns $\mathrm{ON}$ through the attraction of holes (l) the body is p-type (m) the body is n-type (n) the body is furry I. $n$-channel enhancement II. $n$-channel depletion III. $p$-channel enhancement IV. $p$-channel depletion V. cat

Match each characteristic, listed (a) through (n), with the appropriate structure(s), listed I through V. More than one structure may apply to each.
(a) conducts when $V_{G S}$ is positive
(b) hole current flows when transistor is $\mathrm{ON}$
(c) electron current flows when transistor is $\mathrm{ON}$
(d) conducts when $V_{G S}=0$
(e) conducts when $V_{G S}$ is negative
(f) turns OFF through the repulsion of electrons
(g) turns OFF through the repulsion of holes
(h) conducting channel formed during fabrication
(i) conducting channel formed by biasing the gate
(j) turns ON through the attraction of electrons
(k) turns $\mathrm{ON}$ through the attraction of holes
(l) the body is p-type
(m) the body is n-type
(n) the body is furry
I. $n$-channel enhancement
II. $n$-channel depletion
III. $p$-channel enhancement
IV. $p$-channel depletion
V. cat

Key Concepts

Charge Carriers

The concept of charge carriers is fundamental to semiconductor operation. In MOSFETs, the majority carriers are electrons in n-channel devices and holes in p-channel devices. The type of charge carrier influences how the device turns on (by attracting the appropriate carrier) and how it turns off (by repelling the carrier).

MOSFET

A Metal Oxide Semiconductor Field-Effect Transistor is a voltage-controlled device that uses an insulated gate to modulate the conductivity between source and drain. Its operation is based on applying a voltage to the gate to create or deplete a conductive channel in the semiconductor substrate.

Enhancement?Mode Operation

Enhancement-mode transistors are normally off at zero gate-source voltage. Their conductive channel is induced by applying a voltage that exceeds a threshold, leading to the attraction of carriers (electrons for n-channel and holes for p-channel devices) into the channel region, thereby enabling conduction.

Depletion?Mode Operation

Depletion-mode transistors are normally on due to a pre-existing conductive channel that is formed during fabrication. To turn these devices off, a bias is applied to repel the existing charge carriers (electrons or holes), thereby depleting the channel of carriers and reducing conduction.

Substrate Doping

Substrate doping involves the introduction of impurities into the semiconductor to create either p-type or n-type material. The nature of the substrate determines the type of channel that will form during operation and affects the operation of the device, such as whether conduction requires biasing or is present by default.

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