The common gate $n$-channel enhancement mode MOSFET circuit shown in Figure 12.12(a) has new component values as follows: $R_S=1 \mathrm{k} \Omega, R_D=3 \mathrm{k} \Omega$, and $g_m$ for the transistor is determined to be $2 \times 10^{-3} \mathrm{~S}$; assume $r_o$ is infinite. (a) Draw a small-signal equivalent circuit. (b) Compute the small-signal voltage gain. (c) Determine the amplifier input resistance, $R_i$.