Question
The drain current of an $n$-channel depletionmode MOSFET is plotted as a function of the gate voltage in Figure P11.24. Obtain the value of the "pinch-off" voltage for the MOSFET.Figure P11.24 can't copy
Step 1
The pinch-off voltage (V_p) is the gate voltage at which the drain current (I_D) becomes constant and does not increase with further increases in gate voltage (V_G). This occurs when the channel is fully depleted of charge carriers. Show more…
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Answer :
An n-channel depletion mode MOSFET with an $\mathrm{n}^{+}$ polysilicon gate is shown in Figure $10.41$. The $\mathrm{n}$ -channel doping is $N_{d}=10^{15} \mathrm{~cm}^{-3}$ and the oxide thickness is $t_{\mathrm{ox}}=500 \AA$. The equivalent fixed oxide charge is $Q_{s s}^{\prime}=10^{10} \mathrm{~cm}^{-2} .$ The $\mathrm{n}$ -channel thickness $t_{c}$ is equal to the maximum induced space charge width. (Disregard the space charge region at the n-channel-p-substrate junction.) ( $a$ ) Determine the channel thickness $t_{c}$ and $(b)$ calculate the threshold voltage.
Plot the threshold voltage of a p-channel MOSFET versus n-type substrate doping concentration similar to Figure $10.22$. Consider both $\mathrm{n}^{+}$ and $\mathrm{p}^{+}$ polysilicon gates. Use reasonable device parameters.
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