Numerade

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Can someone help me with the step-by-step mechanism for this? Thank you! DEPC (1.3 eq., NEt(2.7 eq.) 4s2RH 4s2R OH Y3R Y3RY DMF, 0C, 2h -r.t., 14-24h Boc OMe O Boc OMe O Ph 11 S. 79% N-Boc-Dap-Doe 20 Ph 1 N NH*CFCO 1-CFCOH, CHCl, 1.5h 2-DEPC 1.2eq, NEtg2.7eq DMF, 0C, 2h -r.t., 14h 5S 4S BocN 3RCOH Me OMe 7 19 1-CFCOH, CHCl2, 3h BocHN. 2-BroP3.1 eq., iPrNEt 7 eq.) CHCl2, 0C, 2h, r.t., 72h N 3R Me OMe O Me 3F OMe BocN Me Ph Me 72% 55% BocHNS OH N-Boc-Dil-Dap-Doe 21 N-Boc-Val-Dil-Dap-Doe 22 N-Boc-Val 1-CFCOH, CHCl, 4h 2-DEPC (1.3 eq.) N-methylmorpholine (6 eq.) DMF, 0C, 38h Me N'S 3R Me Me Me Me 52% MeC OH Dolastatin 10 Dov

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2. Apply your knowledge of biomolecules and predict what the results would be if you ran the chemical tests from this lab (Lugol’s, Benedict’s, Biuret, and Sudan III) on a sample of whole animal cells. Which, if any, of these tests would be positive and explain why.

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1- you are given an aqueous suspension of silver nanoparticles that have a 10 nm diameter and told that they are at a concentration of 100 mu M. Compute the mass fraction and the volume fraction of silver in this suspension. What would you expect the density of this suspension to be? 2- What is the specific surface area of a balloon (i.e. a hollow spherical shell) with a 10 cm radius and a 1 mm wall thickness? Include both the inside and outside of the balloon as surface area. Assuming the balloon was scaled isometrically, how large could the specific surface area get as the balloon is scaled down? You may assume a material density of 1 g/cm3.

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$\frac{4}{3}$

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Suppose (nominal) rate is rd=5% with semiannual compounding, the value of a 15-year, 10% semiannual coupon bond that pays $50 interest every 6 months, Find the value of bond Group of answer choices $1362.82 $1686.09 $1523.26 $1577.09

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Q1) A 10 GHz uniform plane wave is propagating along the +z-direction, in a material such that $\epsilon_r = 81$, $\mu_r = 1$ and $\sigma = 2$ mho/m. a) (20 pts.) Find the values of $\gamma$, $\alpha$ and $\beta$. b) (10 pts.) Find the intrinsic impedance. c) (20 pts.) Write the phasor form of electric and magnetic fields, if the amplitude of the electric field intensity is 0.5 V/m.

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2. Use an inverse matrix to solve for the system of equations. 4y + 8z = 80 -6x - 4z = -6 x + 4y + 7z = 71 *This question is worth four points. In order to receive full credit, you must show your work or justify your answer. $\begin{bmatrix} -2 \ 6 \ 5 \end{bmatrix}$ $\begin{bmatrix} -7 \ 12 \ 3 \end{bmatrix}$ $\begin{bmatrix} -4 \ 4 \ 4 \end{bmatrix}$ $\begin{bmatrix} -3 \ 8 \ 6 \end{bmatrix}$ None of these are correct.

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An individual is holding her right leg (tibia and fibula) in 20° (clockwise (CW) with respect a right horizontal passing through her knee joint) of knee flexion during the performance of a leg extension exercise with a 133.5 N cuff weight attached to her ankle. The cuff weight is located 39 cm from the knee joint. The weight of the individual's combined leg and foot is 40.7 N and the COM of the combined leg and foot is located 0.236 m from the knee joint. The net muscle force of the quadriceps acting to maintain the current position is 1168 N. The quadriceps muscle force is located 17.4 cm from the knee joint and has a line of action 15° CW with respect to the leg. The unknown external force(s) is/are the net joint reaction forces acting on her knee joint in this position. (5 pts)

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Question 20 Which is a money market security? I. T-bond II. T-note III. T-bill II only I and II III only I, II and III Question 21 Which is used to transact business internationally? a mortgage banker's acceptance repurchase agreement commercial paper 2 pts 2 pts

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(b) A MOSFET with no heat sink absorbs a thermal power of 2W. The thermal resistance from junction to ambient is 40°C/W, if the ambient temperature is 30°C. i. Determine the junction temperature. ii. If the maximum junction temperature is 150°C, how much power can be absorbed without requiring a heat sink? (c) The maximum junction temperature of a bipolar junction transistor is $J_{max} = 150°C$ and the maximum power dissipation is 2.0 W at ambient temperature $T_A = 25°C$ and 40 W at case temperature $T_C = 25°C$. i. List two types of power losses which lead to heat generation in the power semiconductor devices. ii. Calculate the maximum allowable power dissipation of the transistor operating in ambient temperature of 50°C in free air environment.

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joshua b.