Please Explain each step in detail. Want to learn this, not so much about the answers, but understanding!!!
Please label the direction of the drift and diffusion (electrical) currents for both electrons and holes, given their carrier
concentration distribution profiles and the applied electric field marked in the figure. (10%)
Consider the following equilibrium band diagram with the Fermi level for a semiconductor sample, sketch the electron
and hole concentration profiles and the direction of the built-in electric field ( 20%
A Si sample doped with donor N_(d)=10^(14)cm^(-3). Please find equilibrium carrier concentration n_(0) and p_(0), and draw the energy
band diagram with the Fermi level calculated and labeled. At a non-equilibrium steady-state condition, a light source
generates 10^(19)EH(P)/(c)m^(-3) per second, and the electron and hole carrier lifetimes both being 2mu s. Please find the steady state
excess carrier concentration delta n, the total electron concentration n, the total hole concentration p, and calculate the electron
and hole quasi-Fermi levels and label them in the energy band diagram. (30%)
5. Please label the direction of the drift and diffusion (electrical) currents for both electrons and holes, given their carrier concentration distribution profiles and the applied electric field marked in the figure.(10%)
nn(x)- Electron Concentration
np(x) Hole
h+
Concentration
Electric Field
6. Consider the following equilibrium band diagram with the Fermi level for a semiconductor sample, sketch the electron and hole concentration profiles and the direction of the built-in electric field (20%
EF
Ec
Ev
7. A Si sample doped with donor N=1014cm3. Please find equilibrium carrier concentration no and po, and draw the energy band diagram with the Fermi level calculated and labeled. At a non-equilibrium steady-state condition, a light source generates 1019 EHP/cm-3 per second, and the electron and hole carrier lifetimes both being 2s. Please find the steady state excess carrier concentration &n, the total electron concentration n, the total hole concentration p, and calculate the electron and hole quasi-Fermi levels and label them in the energy band diagram. (30%)