5. Please label the direction of the drift and diffusion (electrical) currents for both electrons and holes, given their carrier
concentration distribution profiles and the applied electric field marked in the figure. (10%)
n(x)-(c
Electron
Concentration
np(x)
Hole
Concentration
Electric Field
6. Consider the following equilibrium band diagram with the Fermi level for a semiconductor sample, sketch the electron
and hole concentration profiles and the direction of the built-in electric field (20%)
EF
Ec
Ev
7. A Si sample doped with donor N=10^{14}cm?³. Please find equilibrium carrier concentration $n_0$ and $p_0$, and draw the energy
band diagram with the Fermi level calculated and labeled. At a non-equilibrium steady-state condition, a light source
generates 10^{19} EHP/cm³ per second, and the electron and hole carrier lifetimes both being 2µs. Please find the steady state
excess carrier concentration $\delta n$, the total electron concentration $n$, the total hole concentration $p$, and calculate the electron
and hole quasi-Fermi levels and label them in the energy band diagram. (30%)