Question

Problem #2: A) Sketch the equilibrium band diagram for an InP PIN Homojunction including $E_c$, $E_v$, $E_i$ and $E_f$. Label the built in potential as it relates to $E_i$ on the diagram. B) Write equations for the difference between the intrinsic Fermi level and the actual Fermi level on each side of the junction. C) Use the above results to write an expression for the built in potential of the PIN junction. D) Calculate the built in potential for an InP PIN junction with an Intrinsic region thickness of 1µm and doping of $N_D = N_A = 6 \times 10^{18} cm^{-3}$. Assume $n_i = 1.3 \times 10^7 cm^{-3}$ for InP.

          Problem #2:
A) Sketch the equilibrium band diagram for an InP PIN Homojunction including $E_c$, $E_v$, $E_i$ and $E_f$.
Label the built in potential as it relates to $E_i$ on the diagram.
B) Write equations for the difference between the intrinsic Fermi level and the actual Fermi level on
each side of the junction.
C) Use the above results to write an expression for the built in potential of the PIN junction.
D) Calculate the built in potential for an InP PIN junction with an Intrinsic region thickness of 1µm
and doping of $N_D = N_A = 6 \times 10^{18} cm^{-3}$. Assume $n_i = 1.3 \times 10^7 cm^{-3}$ for InP.

Problem #2:
A) Sketch the equilibrium band diagram for an InP PIN Homojunction including Ec, Ev, Ei and Ef.
Label the built in potential as it relates to Ei on the diagram.
B) Write equations for the difference between the intrinsic Fermi level and the actual Fermi level on
each side of the junction.
C) Use the above results to write an expression for the built in potential of the PIN junction.
D) Calculate the built in potential for an InP PIN junction with an Intrinsic region thickness of 1µm
and doping of ND = NA = 6 × 10^18 cm^-3. Assume ni = 1.3 × 10^7 cm^-3 for InP.

Added by Lori D.

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